Department of Microelectronics
Faculty of Electrical Engineering, Mathematics, and Computer Science

MSc Toth

PhD student
Electronic Instrumentation (EI), Department of Microelectronics

Themes: Autonomous sensor systems

Biography

Nandor Toth was born in Delft, The Netherlands, in 1997. He received both his BSc and MSc in Electrical Engineering at TU Delft in 2018 and 2021, respectively. In February 2022 he started his PhD position at the Electronic Instrumentation Laboratory where he is researching "Hybrid CMOS temperature sensors

Publications

  1. A PNP-Based Temperature Sensor With Continuous-Time Readout and ± 0.1 °C (3σ) Inaccuracy From -55 °C to 125 °C
    Toth, Nandor G.; Tang, Zhong; Someya, Teruki; Pan, Sining; Makinwa, Kofi A. A.;
    IEEE Journal of Solid-State Circuits,
    pp. 1-10, 2024. DOI: 10.1109/JSSC.2024.3402131
    Keywords: ... Temperature sensors; Resistors; Energy efficiency; Instruments; Temperature dependence; Modulation; Energy resolution;Bitstream-controlled (BSC) dynamic-element-matching (DEM);continuous-time (CT) ΔΣ-modulator; current-mode readout; PNP-based temperature sensor; resistor ratio self-calibration.

    Abstract: ... This article describes a PNP-based temperature sensor that achieves both high energy efficiency and accuracy. Two resistors convert the CTAT and PTAT voltages generated by a PNP-based front-end into two currents whose ratio is then digitized by a continuous-time (CT) ΔΣ-modulator. Chopping and dynamic-element-matching (DEM) are used to mitigate the effects of component mismatch and 1/f noise, while the spread in VBE and in the ratio of the two resistors is digitally trimmed at room temperature (RT). Fabricated in a 0.18 μm CMOS process, the sensor occupies 0.12 mm2, and draws 9.5 μA from a supply voltage ranging from 1.7 to 2.2 V. Measurements on 40 samples from one batch show that it achieves an inaccuracy of ±0.1 °C (3σ ) from −55 °C to 125 °C, and a commensurate supply sensitivity of only 0.01 °C/V. Furthermore, it achieves high energy efficiency, with a resolution Figure of Merit (FoM) of 0.85 pJ·K2.

  2. A BJT-Based Temperature Sensor with±0.1°C (3σ) Inaccuracy from -55°C to 125°C and a 0.85pJ.K2 Resolution FoM Using Continuous-Time Readout
    Toth, Nandor G.; Tang, Zhong; Someya, Teruki; Pan, Sining; Makinwa, Kofi A. A.;
    In 2023 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 358-360, 2023. DOI: 10.1109/ISSCC42615.2023.10067457

  3. A 40A Shunt-Based Current Sensor with ±0.2% Gain Error from −40°C to 125°C and Self-Calibration
    Tang, Zhong; Toth, Nandor G.; Zamparette, Roger; Nezuka, Tomohiro; Furuta, Yoshikazu; Makinwa, Kofi A. A.;
    In 2023 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 348-350, 2023. DOI: 10.1109/ISSCC42615.2023.10067304

BibTeX support

Last updated: 22 Jan 2024

Nandor Toth